| PART |
Description |
Maker |
| MC33882PR2 PC33882EK MC33882PEP MC33882PVW 3388211 |
Six Output Low Side Switch with SPI and Parallel Input Control
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| MC33880 MC33880DW_R2 MC33880DWB_R2 |
0.55mOhm; RDS(on) CONFIGURABLE EIGHT OUTPUT SWITCH WITH SPI I/O CONTROL
CONFIGURABLE OCTAL SERIAL SWITCH WITH SERIAL PERIPHERAL INTERFACE
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| BA3131FS BA3131 |
Dual operational amplifier with switch, for audio use (3 inputs × 1 output × 2)
ER 14C 14#16 PIN PLUG
Dual operational amplifier with switch/ for audio use (3 inputs 1 output 2)
Dual operational amplifier with switch, for audio use (3 inputs 1 output 2)
Dual operational amplifier with switch, for audio use (3 inputs 】 1 output 】 2)
Standard Linear LSIs > Operational amplifier > Operational amplifier with input multiplexer
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| IRF9530S IRF9530SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| DAN217 DAN217U |
Switch Mode Power Supply; Output Power:76.8W; No. of Outputs:1; Output 1 VDC :24VDC; Output Current 1:3.2A; Power Supply Mounting:Chassis; Output Current:3.2A; Output Power Max:76.8W; Output Voltage:24VDC; Series:JWS RoHS Compliant: Yes 开关二极管
Switching diode
|
Rohm Co., Ltd.
|
| ADXRS800 ADXRS800WBRGZ ADXRS800WBEYZ |
High Performance, SPI Digital Output Angular Rate Sensor
High Performance, SPI Digital Output, Angular Rate Sensor
|
Analog Devices
|
| AT25010A AT25040A AT25020A |
1/2/4k, SPI Bus Serial EEPROM, High Speed, supports SPI Mode 0 and 3.
|
Atmel
|
